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Numéro de référence | CEP20P10 | ||
Description | P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEP20P10/CEB20P10
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-100V, -20A, RDS(ON) =130mΩ @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-100
±20
-20
-80
115
0.77
Single Pulsed Avalanche Energy e
EAS 162
Single Pulsed Avalanche Current e
IAS 18
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.3
62.5
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2012.Jan
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CEP20P10 ] |
No | Description détaillée | Fabricant |
CEP20P10 | P-Channel Enhancement Mode Field Effect Transistor | CET |
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