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Numéro de référence | CEB18N5 | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEP18N5/CEB18N5
CEF18N5
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP18N5
CEB18N5
CEF18N5
VDSS
500V
500V
500V
RDS(ON)
0.27Ω
0.27Ω
0.27Ω
ID
18A
18A
18A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
500
±30
18
11
72
219
1.8
18 d
11 d
72 d
74
0.6
Single Pulsed Avalanche Energy e
EAS 859
Single Pulsed Avalanche Current e
IAS 18
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.57
62.5
1.7
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2013.Jan.
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CEB18N5 ] |
No | Description détaillée | Fabricant |
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