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CEB13N5A fiches techniques PDF

CET - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEB13N5A
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEB13N5A fiche technique
CEP13N5A/CEB13N5A
CEF13N5A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP13N5A
CEB13N5A
CEF13N5A
VDSS
500V
500V
500V
RDS(ON)
0.48Ω
0.48Ω
0.48Ω
ID
13A
13A
13A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy h
Single Pulsed Avalanche Current h
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263 TO-220F
VDS 500
VGS ±30
ID
13 13 d
8 8d
IDM e
52 52d
208 52
PD 1.7 0.4
EAS 542
IAS 8.5
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.6
62.5
2.4
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2013.Feb
http://www.cetsemi.com

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