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PDF NCS2302 Data sheet ( Hoja de datos )
| Número de pieza | NCS2302 | |
| Descripción | Headset Detection Interface | |
| Fabricantes | ON Semiconductor | |
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NCS2302
Headset Detection
Interface with Send/End
Detect
The NCS2302 is a compact and cost effective headset detection
interface IC. It integrates several circuit blocks to detect the presence
of a stereo headset with a microphone and whether the send/end button
has been pressed. The NMOS transistor on the MIC pin mutes the
signal when the headset is not present. The built in resistor divider
provides the reference voltage for detecting the left audio channel.
When L_DET and GND_DET are pulled low, the logic low output of
the OR gate indicates the headset has been connected properly and the
MIC pull−down is disabled. A comparator is integrated for detecting
the send/end button press. The NCS2302 comes in a space−saving
UQFN10 package (1.4 x 1.8 mm).
Features
• Wide Supply Voltage Ranges:
For Headset Detection Circuit: VDD = 1.6 V to 2.5 V
For S/E Comparator Circuit: VDD2 = 1.6 V to 2.8 V
• Low Quiescent Supply Current: 17 mA typical
• Low Impedance MIC Pull−Down Reduces Pop & Click Noise:
RDS(ON) = 0.45 W Typical
• Space Saving UQFN10 Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Cell Phones, Smartphones
• Tablets
• Notebooks
http://onsemi.com
1
UQFN10
MU SUFFIX
CASE 488AT
MARKING DIAGRAM
AQMG
G
AQ = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN DIAGRAM
S/E_DET
S/E_REF
VDD2
S/E DET
8 76 5
94
10 1 2 3
GND MIC
GND_DET
L_DET
VDD
Top View
ORDERING INFORMATION
Device
Package
Shipping†
NCS2302MUTAG UQFN10
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 3
1
Publication Order Number:
NCS2302/D
1 page  
NCS2302
Table 5. ELECTRICAL CHARACTERISTICS Typical values are referenced to TA = 25°C, VDD = 1.8 V, VDD2 = 2.1 V, unless
otherwise noted. Min/max values apply from TA = −40°C to 85°C, unless otherwise noted. (Notes 5, 6)
Parameter
Test Conditions
Symbol Min Typ Max Units
OUTPUT CHARACTERISTICS OF DET
Voltage Output Low
IOH = 0.1 mA
Voltage Output High
IOH = −0.1 mA
Rise Time
COUT = 15 pF, RL = 1 MW
Fall Time
COUT = 15 pF, RL = 1 MW
INPUT CHARACTERISTICS OF S/E_REF AND S/E_DET
VOL 0.1 V
VOH
1.6
V
trise 50 ns
tfall 28 ns
Propagation Delay to S/E
Cout = 15 pF, VCM = mid−supply, 100 mV tpLH, tpHL
overdrive
50
ns
Input Leakage
Input Capacitance
VCM = 0.9 V
S/E_DET, f = 1 MHz
S/E_REF, f = 1 MHz
IIL 150 pA
CIN 3 pF
11
OUTPUT CHARACTERISTICS OF S/E
Voltage Output Low
Voltage Output High
Rise Time
Fall Time
CHARACTERISTICS OF MIC
IOH = 0.1 mA
IOH = −0.1 mA
COUT = 15 pF, RL = 1 MW
COUT = 15 pF, RL = 1 MW
VOL 0.1 V
VOH
1.9
V
trise 30 ns
tfall 18 ns
Drain−Source On Resistance of NMOS IMIC = 1 mA
RDS(ON)
0.45
5. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.
6. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
1.2
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
0.8 0.8
VDD = 1.6 V
VDD = 1.8 V
0.7 0.7
0.6
T = 85°C
0.5 T = 25°C
0.4 T = −40°C
0.6
0.5 T = 85°C
T = 25°C
0.4 T = −40°C
0.3
0.2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
MIC DRAIN CURRENT (mA)
Figure 3. MIC On Resistance vs. Drain Current
at VDD = 1.6 V
0.3
0.2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
MIC DRAIN CURRENT (mA)
Figure 4. MIC On Resistance vs. Drain Current
at VDD = 1.8 V
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NCS2302.PDF ] | |
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