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2SA1415 fiches techniques PDF

ON Semiconductor - PNP / NPN Epitaxial Planar Silicon Transistors

Numéro de référence 2SA1415
Description PNP / NPN Epitaxial Planar Silicon Transistors
Fabricant ON Semiconductor 
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2SA1415 fiche technique
2SA1415 / 2SC3645
Ordering number : EN1720B
2SA1415 / 2SC3645
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching,
Predriver Applications
Features
Adoption of FBET process.
High breakdown voltage (VCEO=160V).
Excellent linearity of hFE and small Cob.
Fast switching speed.
Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs.
Specifications ( ) : 2SA1415
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Marking : 2SA1415 : AA, 2SC3645: CA
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Moutned on ceramic board (250mm20.8mm)
Ratings
(--)180
(--)160
(--)5
(--)140
(--)200
500
1.3
150
--55 to +150
Unit
V
V
V
mA
mA
mW
W
°C
°C
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn5seImwiw.cwo.omnsemi.com
Publication Order Number:
2SA1415_2SC3645/D

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