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ON Semiconductor - Small Signal MOSFET

Numéro de référence 1HP04CH
Description Small Signal MOSFET
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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1HP04CH fiche technique
1HP04CH
Small Signal MOSFET
–100V, 18, –170mA, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
High Voltage (100V)
4V drive
High Speed Switching and Low Loss
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Lithium-ion Battery Charging and Discharging Cell Balance
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID 170 mA
Drain Current (Pulse)
PW 10μs, duty cycle 1%
IDP
680 mA
Power Dissipation
When mounted on ceramic substrate
(900mm2 × 0.8mm)
PD
0.6 W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg
55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
208 °C/W
www.onsemi.com
VDSS
100V
RDS(on) Max
18@ 10V
21@ 4V
ID Max
170mA
ELECTRICAL CONNECTION
P-Channel
3
1 1 : Gate
2 : Source
3 : Drain
2
PACKING TYPE : TL MARKING
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
October 2015 - Rev. 1
1
Publication Order Number :
1HP04CH/D

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