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Número de pieza | SZESD7008 | |
Descripción | ESD Protection Diodes | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! ESD7008, SZESD7008
ESD Protection Diodes
Low Capacitance ESD Protection for
High Speed Data
The ESD7008 ESD protection diode is designed specifically to
protect four high speed differential pairs. Ultra−low capacitance and
low ESD clamping voltage make this device an ideal solution for
protecting voltage sensitive high speed data lines. The flow−through
style package allows for easy PCB layout and matched trace lengths
necessary to maintain consistent impedance for the high speed lines.
Features
• Integrated 4 Pairs (8 Lines) High Speed Data
• Single Connect, Flow through Routing
• Low Capacitance (0.12 pF Typical, I/O to GND)
• Protection for the Following IEC Standards:
IEC 61000−4−2 Level 4
• UL Flammability Rating of 94 V−0
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• This is a Pb−Free Device
Typical Applications
• V−by−One HS
• Thunderbolt (Light Peak)
• USB 3.0
• HDMI
• Display Port
• LVDS
http://onsemi.com
18
1
UDFN18
CASE 517BV
MARKING
DIAGRAM
7008M
G
7008
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
ESD7008MUTAG
UDFN18 3000 / Tape &
(Pb−Free)
Reel
SZESD7008MUTAG UDFN18 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Operating Junction Temperature Range TJ −55 to +125 °C
Storage Temperature Range
Tstg − 55 to +150 °C
Lead Solder Temperature −
Maximum (10 Seconds)
TL 260 °C
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ESD
ESD
±15 kV
±15 kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 5
1
Publication Order Number:
ESD7008/D
1 page ESD7008, SZESD7008
22
20
18
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22
VOLTAGE (V)
Figure 8. Positive TLP I−V Curve
Transmission Line Pulse (TLP) Measurement
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 10. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 11 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
−22
−20
−18
−16
−14
−12
−10
−8
−6
−4
−2
0
0
2 4 6 8 10 12 14 16 18 20 22
VOLTAGE (V)
Figure 9. Negative TLP I−V Curve
L
50 W Coax
Cable
S Attenuator
÷
50 W Coax
Cable
10 MW
IM VM
VC DUT
Oscilloscope
Figure 10. Simplified Schematic of a Typical TLP
System
Figure 11. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
http://onsemi.com
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SZESD7008.PDF ] |
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