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PDF FDMS8670 Data sheet ( Hoja de datos )

Número de pieza FDMS8670
Descripción N-Channel Power Trench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMS8670 Hoja de datos, Descripción, Manual

May 2009
FDMS8670
N-Channel Power Trench® MOSFET
30V, 42A, 2.6m:
tm
Features
General Description
„ Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A
„ Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor's latest proprietary Power Trench® process that
has been especially tailored to minimize on-resistance. This part
exhibits industry leading switching FOM (RDS*Qgd) to enhance
DC-DC synchronous rectifier efficiency.
Application
„ DC - DC Conversion
Top Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
42
135
24
150
288
78
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.6
50
°C/W
Device Marking
FDMS8670
Device
FDMS8670
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS8670 Rev.C1
1
www.fairchildsemi.com

1 page




FDMS8670 pdf
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
0.001
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RTJA = 125oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
100
1000
©2009 Fairchild Semiconductor Corporation
FDMS8670 Rev.C1
5
www.fairchildsemi.com

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