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ON Semiconductor - Schottky Barrier Diode

Numéro de référence SB2003M
Description Schottky Barrier Diode
Fabricant ON Semiconductor 
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SB2003M fiche technique
Ordering number : EN8371C
SB2003M
Schottky Barrier Diode
30V, 2A, Low IR, Single MCPH6
http://onsemi.com
Applications
High frequency rectification (switching regulators, converters, choppers)
Features
Low switching noise
Halogen free compliance
Low leakage current and high reliability due to highly reliable planar structure
Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
VRRM
Nonrepetitive Peak Reverse Surge Voltage VRSM
Average Output Current
Surge Forward Current
Junction Temperature
IO
IFSM
Tj
Storage Temperature
Tstg
Conditions
50Hz sine wave, 1 cycle
Ratings
30
35
2.0
10
--55 to +125
--55 to +125
Unit
V
V
A
A
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7022A-014
2.0
654
0.15 SB2003M-TL-E
SB2003M-TL-W
0 to 0.02
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
SE
1 23
0.65 0.3
TL
123
654
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Cathode
6 : Cathode
MCPH6
Electrical Connection
654
12 3
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
June, 2014
61714HK TC-00002878/N0712TKIM/62310TKIM/62405MSIM SB No.8371-1/4

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