|
|
Número de pieza | VB40M120C-E3 | |
Descripción | Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de VB40M120C-E3 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! www.vishay.com
VB40M120C-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VB40M120C
PIN 1
K
PIN 2
HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
2 x 20 A
120 V
250 A
0.64 V
150 °C
TO-263AB
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
VB40M120C
120
40
20
250
10 000
-40 to +150
UNIT
V
A
V/μs
°C
Revision: 11-Sep-13
1 Document Number: 89468
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet VB40M120C-E3.PDF ] |
Número de pieza | Descripción | Fabricantes |
VB40M120C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |