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PDF NSBC114TDP6 Data sheet ( Hoja de datos )
| Número de pieza | NSBC114TDP6 | |
| Descripción | Dual NPN Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
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MUN5215DW1,
NSBC114TDXV6,
NSBC114TDP6
Dual NPN Bias Resistor
Transistors
R1 = 10 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
6
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5215DW1T1G
SOT−363
3,000 / Tape & Reel
NSVMUN5215DW1T1G*
SOT−363
3,000 / Tape & Reel
NSBC114TDXV6T1G
SOT−563
4,000 / Tape & Reel
NSBC114TDXV6T5G
SOT−563
8,000 / Tape & Reel
NSBC114TDP6T5G
SOT−963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1
1
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
6
7E M G
G
1
SOT−363
CASE 419B
7E M G
G
1
SOT−563
CASE 463A
MG
1G
SOT−963
CASE 527AD
7E/R
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Publication Order Number:
DTC114TD/D
1 page  
1
IC/IB = 10
MUN5215DW1, NSBC114TDXV6, NSBC114TDP6
TYPICAL CHARACTERISTICS − NSBC114TF3
1000
150°C 25°C
25°C
0.1
150°C
−55°C
0.01
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
100
10
1
50 1
−55°C
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
2.4
2.0
1.6
1.2
0.8
0.4
0
0
f = 10 kHz
IE = 0 A
TA = 25°C
100
150°C
10
1 25°C
−55°C
0.1
10 20 30 40
VR, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
0.01
VO = 5 V
0.001
50 0 1 2 3 4 5 6 7
Vin, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
100
10
25°C
−55°C
1
150°C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
http://onsemi.com
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NSBC114TDP6.PDF ] | |
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