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CPH3122 fiches techniques PDF

ON Semiconductor - Bipolar Transistor

Numéro de référence CPH3122
Description Bipolar Transistor
Fabricant ON Semiconductor 
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CPH3122 fiche technique
Ordering number : EN7220B
CPH3122
Bipolar Transistor
–30V, –3A, Low VCE(sat) PNP Single CPH3
http://onsemi.com
Applications
Relay drivers, lamp drivers, motor drivers, ash
Features
Adoption of MBIT processes
Large current capacity
Low collector to emitter saturation voltage
High-speed switching
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)
High allowable power dissipation
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature
Tstg
Conditions
When mounted on ceramic substrate (600mm2×0.8mm)
Ratings
--30
--30
--5
--3
--5
--600
0.9
150
--55 to +150
Unit
V
V
V
A
A
mA
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7015A-003
2.9
3
CPH3122-TL-E
0.15
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
1
0.95
2
0.4
0.05
1 : Base
2 : Emitter
3 : Collector
CPH3
TL
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
November, 2013
N2013 TKIM TC-00003060/N1504 TSIM TB-00000300/41002 TSIM TA-100028,100030 No.7220-1/4

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