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PDF NTR5198NL Data sheet ( Hoja de datos )
| Número de pieza | NTR5198NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTR5198NL
Power MOSFET
60 V, 155 mW, Single N−Channel Logic
Level, SOT−23
Features
• Small Footprint Industry Standard Surface Mount SOT−23 Package
• Low RDS(on) for Low Conduction Losses and Improved Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS 60 V
Gate−to−Source Voltage
VGS ±20 V
Continuous Drain
Current RYJ−mb
(Notes 1, 2, 3, and 4)
Steady TA = 25°C
State
TA = 100°C
ID
2.2 A
1.6
Power Dissipation
RYJ−mb
(Notes 1 and 3)
TA = 25°C
TA = 100°C
PD
1.5 W
0.6
Continuous Drain
Current RqJA
(Note 1, 2, 3, and 4)
Steady TA = 25°C
State
TA = 100°C
Power Dissipation RqJA
(Notes 1 and 3)
TA = 25°C
TA = 100°C
Pulsed Drain Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage Temperature
ID
PD
IDM
TJ,
Tstg
1.7 A
1.2
0.9 W
0.4
27 A
−55 to °C
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS 1.9 A
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
155 mW @ 10 V
205 mW @ 4.5 V
ID MAX
2.2 A
N−Channel
D
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
AA6 M G
G
1
Gate
2
Source
AA6 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTR5198NLT1G
SOT−23
(Pb−Free)
3000 /
Tape & Reel
NTR5198NLT3G
SOT−23
(Pb−Free)
10000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 1
1
Publication Order Number:
NTR5198NL/D
1 page  
1000
NTR5198NL
TYPICAL CHARACTERISTICS
100
VGS ≤ 10 V
Single Pulse
TC = 25°C
10
10 mS
100 mS
1 1 mS
0.1
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
10 mS
dc
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
100 50% Duty Cycle
20%
10%
10 5%
2%
1%
1
0.000001
0.00001
RqJA Steady State = 139°C/W
Single Pulse
0.0001
0.001
0.01
0.1
1
t, TIME (sec)
Figure 14. Thermal Impedance (Junction−to−Ambient)
10
100 1000
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTR5198NL.PDF ] | |
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