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PDF NTMFD4C88N Data sheet ( Hoja de datos )
| Número de pieza | NTMFD4C88N | |
| Descripción | Dual N-Channel SO8FL | |
| Fabricantes | ON Semiconductor | |
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NTMFD4C88N
PowerPhase, Dual
N-Channel SO8FL
30 V, High Side 20 A / Low Side 24 A
Features
• Co−Packaged Power Stage Solution to Minimize Board Space
• Minimized Parasitic Inductances
• Optimized Devices to Reduce Power Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• System Voltage Rails
• Point of Load
www.onsemi.com
V(BR)DSS
Q1 Top FET
30 V
Q2 Bottom
FET
30 V
RDS(ON) MAX
5.4 mW @ 10 V
8.1 mW @ 4.5 V
4.4 mW @ 10 V
6.0 mW @ 4.5 V
ID MAX
20 A
24 A
D1 (3, 4, 9)
Figure 1. Typical Application Circuit
100
95
90
85
80 VIN = 12 V
VOUT = 1.2 V
75 VGS = 5 V
FSW = 300 kHz
70 TA = 25°C
0 5 10 15 20 25
LOAD CURRENT (A)
Figure 2. Typical Efficiency Performance
POWERPHASEGEVB Evaluation Board
© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 1
1
(1) G1
(2) S1
SW (5, 6, 7)
(8) G2
S2 (10)
PIN CONNECTIONS
D1 4
D1 3 9 10
D1 S2
S1 2
G1 1
5 SW
6 SW
7 SW
8 G2
(Bottom View)
MARKING
DIAGRAM
1
DFN8
4C88N
CASE 506CR
AYWZZ
1
4C88N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
Publication Order Number:
NTMFD4C88N/D
1 page  
NTMFD4C88N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET Symbol
Test Condition
Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Q1
Q2 tRR
29
16.7
Charge Time
Discharge Time
Q1
ta
Q2
Q1 VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A
tb
Q2
14.2
19.5
15.0
36.2
ns
Reverse Recovery Charge
Q1
Q2
QRR
18.1
nC
27.4
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
5
5 Page 
NTMFD4C88N
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P PowerPhase FET
CASE 506CR
ISSUE C
PIN ONE
IDENTIFIER
0.10 C
0.10 C
NOTE 4
5X L
2X
0.20 C
DA
D1
87 6 5
B 2X
0.20 C
ÉÉÉÉ
1 2 34
TOP VIEW
E1 E
A
c
SIDE VIEW
DETAIL A
C
SEATING
PLANE
NOTE 6
DETAIL A
8X b
0.10 M C A B
1 0.05 M C NOTE 3
D2
1
6X b2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b AND b1 APPLY TO PLATED TERMINAL AND ARE
MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE
TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
4X
h
A1
0.10 M C A B
MILLIMETERS
DIM MIN MAX
A 0.90 1.10
A1 0.00 0.05
b 0.40 0.60
b2 0.40 0.60
c 0.20 0.30
D 5.15 BSC
D1 4.90 5.10
D2 3.70 3.90
D3 2.96 3.16
E 6.15 BSC
E1 5.80 6.00
E2 2.37 2.57
E3 1.05 1.25
E4 1.36 1.56
e 1.27 BSC
G 0.625 BSC
G1 1.615 BSC
h −−− 12 _
L 0.34 0.59
L2 1.68 1.93
E3
0.10 M C A B
E4
L2
e/2
e
BOTTOM VIEW
G1
G
E2
D3
SUPPLEMENTAL
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
1.27
PITCH
0.62
5.50
4.05
5X
0.75
0.54
2.07
1.22
2.67
6.50
1.66 5X
0.76
0.23
0.71 2.31
0.98
6X
0.65
4.10
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
11
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