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FW297 fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence FW297
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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FW297 fiche technique
FW297
Power MOSFET
60V, 58m, 4.5A, Dual N-Channel
www.onsemi.com
Features
Low On-Resistance
4.0V Drive
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
Drain Current (Pulse)
PW 10μs, duty cycle 1%
IDP
Power Dissipation
When mounted on ceramic substrate
(2000mm2 × 0.8mm) 1 unit, PW10s
Total Dissipation
When mounted on ceramic substrate
(2000mm2 × 0.8mm) , PW10s
Junction Temperature
PD
PT
Tj
Storage Temperature
Tstg
Value
60
±20
4.5
18
Unit
V
V
A
A
1.8 W
2.2
150
55 to +150
W
°C
°C
Thermal Resistance Ratings
Parameter
Symbol
Value
Junction to Ambient 1 unit, PW10s *1
RθJA
Junction to Ambient 2 units, PW10s *1
RθJA
Note: *1 When mounted on ceramic substrate (2000mm2 × 0.8mm)
69.4
56.8
Unit
°C/W
VDSS
60V
RDS(on) Max
58m@ 10V
84m@ 4.5V
95m@ 4.0V
ID Max
4.5A
Electrical Connection
N-Channel
8765
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1234
Packing Type : TL
Marking
FW297
TL LOT No.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
April 2015 - Rev. 0
1
Publication Order Number :
FW297/D

PagesPages 5
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