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PDF NVMFS6B05NL Data sheet ( Hoja de datos )
| Número de pieza | NVMFS6B05NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVMFS6B05NL
Advance Information
Power MOSFET
100 V, 8.0 mW, 114 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFS6B05NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1, 2,
3)
Power Dissipation
RqJC (Notes 1, 2)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain Cur-
rent RqJA (Notes 1, 2,
3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
100
±16
114
80
165
83
17
12
3.8
1.9
330
−55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 50 A, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 130 A
EAS 125 mJ
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.9 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
www.onsemi.com
V(BR)DSS
100 V
RDS(ON) MAX
8.0 mW @ 10 V
11.3 mW @ 4.5 V
ID MAX
114 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. P1
1
Publication Order Number:
NVMFS6B05NL/D
1 page  
NVMFS6B05NL
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
0 10 20 30 40 50 60 70 80 90 100
ID, DRAIN CURRENT (A)
Figure 12. GFS vs. ID
100
10
1
0.0001
25°C
100°C
0.001
TAV, TIME IN AVALANCHE (sec)
Figure 13. IPEAK vs. TAV
0.01
100
50% Duty Cycle
10 20%
10%
5%
1 2%
1%
0.1
0.01 Single Pulse
0.001
0.000001 0.00001
0.0001
NVMFS6B05NL, 650 mm2, 2 oz, Cu Single Layer Pad
0.001
0.01
0.1
PULSE TIME (sec)
Figure 14. Thermal Response
1
10 100 1000
DEVICE ORDERING INFORMATION
Device
NVMFS6B05NLT1G
Marking
6B05L
Package
DFN5
(Pb−Free)
Shipping†
1500 / Tape & Reel
NVMFS6B05NLWFT1G
605LWF
DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NVMFS6B05NLT3G
6B05L
DFN5
(Pb−Free)
5000 / Tape & Reel
NVMFS6B05NLWFT3G
605LWF
DFN5
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
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| PDF Descargar | [ Datasheet NVMFS6B05NL.PDF ] | |
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