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PDF NTR4518N Data sheet ( Hoja de datos )
| Número de pieza | NTR4518N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTR4518N
Power MOSFET
30 V, 2.5 A, Single N−Channel, SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 4.5 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
• This is a Pb−Free Device
Applications
• DC−DC Conversion
• Load/Power Switch for Portables
• Load/Power Switch for Computing
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS 30 V
Gate−to−Source Voltage
VGS ±20 V
Continuous Drain
Current (Note 1)
Steady TA = 25°C
State
TA = 85°C
ID
2.0 A
1.5
t ≤ 10 s TA = 25°C
2.5
Power Dissipation
(Note 1)
Steady TA = 25°C
State
PD
0.73 W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
1.5 A
1.1
0.42 W
Pulsed Drain Current
ESD Capability (Note 3)
tp = 10 ms
C = 100 pF,
RS = 1500 W
IDM 6.0 A
ESD 125 V
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TJ, −55 to °C
Tstg 150
IS 2.0 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a product under development.
ON Semiconductor reserves the right to change or discontinue this
product without notice.
This document, and the information contained herein, is CONFIDENTIAL AND
PROPRIETARY and the property of Semiconductor Components Industries,
LLC., dba ON Semiconductor. It shall not be used, published, disclosed or
disseminated outside of the Company, in whole or in part, without the written
permission of ON Semiconductor. Reverse engineering of any or all of the
information contained herein is strictly prohibited.
E 2006, SCILLC. All Rights Reserved.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
85 mW @ 10 V
105 mW @ 4.5 V
ID MAX
2.5 A
N−Channel
D
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
TR3 M G
G
1
Gate
2
Source
TR3 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTR4518NT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 0
1
Publication Order Number:
NTR4518N/D
1 page  
NTR4518N
TYPICAL PERFORMANCE CURVES
CONFIDENTIAL AND PROPRIETARY
NOT FOR PUBLIC RELEASE
300
VDS = 0 V
Ciss
200
Crss
VGS = 0 V
TJ = 25°C
15
10
VDS
QG
15
VGS
10
100
5 QGS
QGD
5
Coss
ID = 2.5 A
TJ = 25°C
00
10 5 0 5 10 15 20 25 30
VGS VDS
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1 23
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
0
4
100
VDD = 24 V
ID = 2.5 A
VGS = 10 V
10
td(off)
tf
td(on)
tr
3
VGS = 0 V
TJ = 25°C
2
1
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
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