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شماره قطعه | FDZ4670 | ||
شرح مفصل | N-Channel PowerTrench MOSFET BGA | ||
تولید کننده | Fairchild Semiconductor | ||
آرم | ![]() |
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![]() May 2007
FDZ4670
N-Channel PowerTrench®MOSFET BGA
30V, 25A, 2.5mΩ
tm
Features
Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 25A
Max rDS(on) = 4.5mΩ at VGS = 4.5V, ID = 18.5A
Ultra-thin package: less than 0.85mm height when mounted to
PCB
Outstanding thermal transfer characteristics
Ultra-low gate charge x rDS(on) product
RoHS Compliant
General Description
Combining Farichild’s 30V PowerTrench process with state-of-
the-art BGA packaging, the FDZ4670 minimize both PCB space
and rDS(on) . This BGA MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, high current handing
capacity, ultra-low profile packaging, low gate charge and low
rDS(on).
This MOSFET feature faster switching and lower gate charge
than other MOSFETs with comparable rDS(on) specifications
resulting in DC/DC power supply designs and POL converters
with higher overall efficiency.
Applications
DC - DC Conversion
POL converters
Index slot
D
G
Bottom
Top
FLFBGA 3.5X4.0
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
S
Ratings
30
±20
25
60
2.5
1.25
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
50
100
0.85
°C/W
Device Marking
4670
Device
FDZ4670
Package
FLFBGA 3.5X4.0
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDZ4670 RevD
1
www.fairchildsemi.com
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قانون اساسی | صفحه 6 | ||
دانلود | [ FDZ4670 دیتاشیت ] |
شماره قطعه | شرح مفصل | تولید کنندگان |
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