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FDB8443 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fairchild Semiconductor - N-Channel PowerTrench MOSFET

شماره قطعه FDB8443
شرح مفصل N-Channel PowerTrench MOSFET
تولید کننده Fairchild Semiconductor 
آرم Fairchild Semiconductor 




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FDB8443 شرح
March 2013
FDB8443
N-Channel PowerTrench® MOSFET
tm
40 V, 182 A, 3.0 mΩ
Features
„ RDS(on) = 2.3 mΩ ( Typ.)@ VGS = 10 V, ID = 80 A
„ QG(tot) = 142 nC ( Typ.)
„ Low Miller Charge, QGD = 32 nC( Typ.)
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ RoHS Compliant
Applications
„ Power Tools
„ Motor drives and Uninterruptible Power Supplies
„ Synchronous Rectification
„ Battery Protection Circuit
D
G
S
D2-PAK
(TO-263)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
IDM
EAS
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Continuous (TA = 25oC, RθJA = 43oC/W)
- Pulsed
Single Pulse Avalanche Energy
(Note 1)
Power Dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
FDB8443
40
±20
182*
129*
120
25
See Figure 4
531
188
1.25
-55 to +175
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case, Max.
Thermal Resistance Junction to Ambient, Max.
(Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area, Max.
FDB8443
0.8
62
43
Unit
V
V
A
mJ
W
W/oC
oC
Unit
oC/W
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
1
www.fairchildsemi.com

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