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PDF FDPF5N50NZU Data sheet ( Hoja de datos )
| Número de pieza | FDPF5N50NZU | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDPF5N50NZU
N-Channel UniFETTM II Ultra FRFETTM MOSFET
500 V, 3.9 A, 2.0
October 2013
Features
• RDS(on) = 1.7 (Typ.) @ VGS = 10 V, ID = 1.95 A
• Low Gate Charge (Typ. 9 nC)
• Low Crss (Typ. 4 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. UniFET II Ultra FRFETTM MOSFET has much superior
body diode reverse recovery performance. Its trr is less than
50nsec and the reverse dv/dt immunity is 20V/nsec while nor-
mal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET II Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation
FDPF5N50NZU Rev. C1
1
S
FDPF5N50NZU
500
±25
3.9*
2.3*
15*
135
3.9
7.8
20
30
0.24
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDPF5N50NZU
4.1
62.5
Unit
oC/W
www.fairchildsemi.com
1 page  
Figure 11. Gate Charge Test Circuit & Waveform
IG = const.
V10GVS
Figure 12. Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
©2010 Fairchild Semiconductor Corporation
FDPF5N50NZU Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDPF5N50NZU.PDF ] | |
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