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EMH2314 fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence EMH2314
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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EMH2314 fiche technique
Ordering number : EN8759A
EMH2314
Power MOSFET
–12V, 37m, –5A, Dual P-Channel
http://onsemi.com
Features
ON-resistance RDS(on)1=28mW(typ.)
1.8V drive
Halogen free compliance
Protection Diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tj
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Value
--12
±8
--5
--20
1.0
1.2
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Symbol
RθJA
Value
125
Unit
°C/W
Package Dimensions
unit : mm (typ)
7045-002
0.2
8
5
EMH2314-TL-H
0.125
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
MP
1
0.5
2.0
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
TL
Electrical Connection
87 6 5
EMH8
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
12 3 4
LOT No.
Semiconductor Components Industries, LLC, 2014
July, 2014
72214HK TC-00003140/51612TKIM PE No.8759-1/5

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