|
|
PDF ECH8668 Data sheet ( Hoja de datos )
| Número de pieza | ECH8668 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de ECH8668 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Ordering number : ENA1510A
ECH8668
Power MOSFET
20V, 7.5A, 17mΩ, –20V, –5A, 38mΩ, Complementary Dual ECH8
http://onsemi.com
Features
• The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
• 1.8V drive
• Halogen free compliance
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
N-channel P-channel
20 --20
±10 ±10
7.5 --5
40 --40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
ECH8668-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TP
Lot No.
TL
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
Electrical Connection
87 6 5
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
80112 TKIM/O2809PE TKIM TC-00002167 No. A1510-1/8
1 page  
ECH8668
SW Time -- ID
[Pch]
1000
7 VDD= --10V
5 VGS= --4V
3
2
td(off)
100
7 tf
5
3 tr
2
td(on)
10
7
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0
--4.5
VDS= --10V
--4.0 ID= --5A
Drain Current,
VGS --
IQDg--
A
23
5 7 --10
IT13079
[Pch]
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0 1 2 3 4 5 6 7 8 9 10 11
Total Gate Charge, Qg -- nC
IT13081
1.8
PD -- Ta
[Nch/Pch]
When mounted on ceramic substrate
1.6 (900mm2×0.8mm)
1.5
1.4
1.3
1.2
1.0
0.8
Total
1unit
Dissipation
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13083
3 Ciss, Coss, Crss -- VDS [Pch]
f=1MHz
2
1000
7
5
Ciss
3
2 Coss
Crss
100
7
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Drain-to-Source
A
Voltage,
SO
VDS
--
V
IT13080
[Pch]
--100
7
5
IDP= --40A
PW≤10μs
3
2
--10
1m1s00μs
7
5
3
2
--1.0
7
5
3
2
ID=
--5A
Operation in this
area is limited by
RDDSC(oopne)r.atio1n0(0Tm1as=0m25s°C)
--0.1
7
5
3
2
--0.01
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2×0.8mm)
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5
Drain-to-Source Voltage, VDS -- V IT13082
No. A1510-5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ECH8668.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ECH8660 | N-Channel and P-Channel Silicon MOSFETs |  Sanyo Semicon Device |
| ECH8660 | Power MOSFET ( Transistor ) | ON Semiconductor |
| ECH8661 | N-Channel and P-Channel Silicon MOSFETs | Sanyo Semicon Device |
| ECH8661 | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |