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Fairchild Semiconductor - N-Channel PowerTrench MOSFET

Numéro de référence FDU068AN03L
Description N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDU068AN03L fiche technique
December 2003
FDD068AN03L / FDU068AN03L
N-Channel PowerTrench® MOSFET
30V, 35A, 6.8m
Features
• rDS(ON) = 5.7m(Typ.), VGS = 4.5V, ID = 35A
• Qg(5) = 24nC (Typ.), VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Applications
• 12V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• ABS
• DC-DC Converters
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 154oC, VGS = 10V)
Continuous (TC < 150oC, VGS = 4.5V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Ratings
30
±20
35
35
17
Figure 4
168
80
0.53
-55 to 175
1.88
100
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDD068AN03L / FDU068AN03L Rev. B1

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