PDF FDU8882 Data sheet ( Hoja de datos )

Número de pieza	FDU8882
Descripción	N-Channel PowerTrench MOSFET
Fabricantes	Fairchild Semiconductor
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No Preview Available ! November 2004 FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET 30V, 55A, 11.5mΩ Features ! rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A ! rDS(ON) = 15mΩ, VGS = 4.5V, ID = 35A ! High performance trench technology for extremely low rDS(ON) ! Low gate charge ! High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Application ! DC/DC converters D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S ©2004 Fairchild Semiconductor Corporation FDD8882/FDU8882 Rev. 1.0.0 1 www.fairchildsemi.com 1 page Typical Characteristics TC = 25°C unless otherwise noted 1000 100 10µs 500 If R = 0 tAV = (L)(IAS)/(1.3RATED BVDSS - VDD) If R ≠ 0 100 tAV = (L/R)ln[(IASR)/(1.3*RATED BVDSS - VDD) +1] 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100µs 1ms 10ms DC 60 Figure 5. Forward Bias Safe Operating Area STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.001 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) 100 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 80 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V 60 40 TJ = 25oC 80 VGS = 10V 60 40 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 4.5V VGS = 3.5V 20 TJ = 175oC TJ = -55oC 0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics 4.5 20 ID = 35A PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 16 12 ID = 1A 8 2 468 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On Resistance vs Gate Voltage and Drain Current 20 VGS = 3V 0 0 TC = 25oC 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.5 Figure 8. Saturation Characteristics 1.8 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.6 1.4 1.2 1.0 0.8 0.6 -80 VGS = 10V, ID = 35A -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDD8882/FDU8882 Rev. 1.0.0 5 www.fairchildsemi.com 5 Page PSPICE Thermal Model REV 23 October 2004 FDD8882T CTHERM1 TH 6 5.6e-4 CTHERM2 6 5 6.8e-4 CTHERM3 5 4 2.0e-3 CTHERM4 4 3 2.8e-3 CTHERM5 3 2 5.7e-3 CTHERM6 2 TL 5.8e-3 RTHERM1 TH 6 5.3e-2 RTHERM2 6 5 2.2e-1 RTHERM3 5 4 2.9e-1 RTHERM4 4 3 3.9e-1 RTHERM5 3 2 6.0e-1 RTHERM6 2 TL 6.6e-1 SABER Thermal Model SABER thermal model FDD8882T template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 =5.6e-4 ctherm.ctherm2 6 5 =6.8e-4 ctherm.ctherm3 5 4 =2.0e-3 ctherm.ctherm4 4 3 =2.8e-3 ctherm.ctherm5 3 2 =5.7e-3 ctherm.ctherm6 2 tl =5.8e-3 rtherm.rtherm1 th 6 =5.3e-2 rtherm.rtherm2 6 5 =2.2e-1 rtherm.rtherm3 5 4 =2.9e-1 rtherm.rtherm4 4 3 =3.9e-1 rtherm.rtherm5 3 2 =6.0e-1 rtherm.rtherm6 2 tl =6.6e-1 } th JUNCTION RTHERM1 RTHERM2 6 5 RTHERM3 RTHERM4 4 RTHERM5 3 RTHERM6 2 CTHERM1 CTHERM2 CTHERM3 CTHERM4 CTHERM5 CTHERM6 tl CASE FDD8882/FDU8882 Rev. 1.0.0 11 www.fairchildsemi.com 11 Page

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