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Numéro de référence | FDD107AN06LA0 | ||
Description | N-Channel PowerTrench MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
January 2004
FDD107AN06LA0
N-Channel PowerTrench® MOSFET
60V, 10A, 107mΩ
Features
• rDS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A
• Qg(tot) = 4.2nC (Typ.), VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 83524
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN (FLANGE)
D
GATE
SOURCE
TO-252AA
FDD SERIES
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 25oC, VGS = 5V)
Continuous (TC = 100oC, VGS = 5V)
Continuous (TA = 25oC, VGS = 5V, RθJA = 52oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Ratings
60
±20
10.9
10
7.1
3.4
Figure 4
9
25
0.17
-55 to 175
Units
V
V
A
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
6.0
100
52
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2004 Fairchild Semiconductor Corporation
FDD107AN06LA0 Rev. A1
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Pages | Pages 11 | ||
Télécharger | [ FDD107AN06LA0 ] |
No | Description détaillée | Fabricant |
FDD107AN06LA0 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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