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Fairchild Semiconductor - 30V N-Channel PowerTrench MOSFET

Numéro de référence FDS7082N3
Description 30V N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS7082N3 fiche technique
February 2004
FDS7082N3
30V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET in the thermally enhanced
SO8 FLMP package has been designed specifically to
improve the overall efficiency of DC/DC converters.
Providing a balance of low RDS(ON) and Qg it is ideal for
synchronous rectifier applications in both isolated and
non-isolated topologies. It is also well suited for both
high and low side switch applications in Point of Load
converters.
Applications
Secondary side Synchronous rectifier
Synchronous Buck VRM and POL Converters
Features
17.5 A, 30 V RDS(ON) = 6 m@ VGS = 10 V
RDS(ON) = 8 m@ VGS = 4.5 V
High performance trench technology for extremely
low RDS(ON)
Low Qg and Rg for fast switching
FLMP SO-8 package for enhanced thermal
performance in an industry-standard package outline.
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7082N3
FDS7082N3
13’’
2004 Fairchild Semiconductor Corporation
Ratings
30
±20
17.5
60
3.0
1.5
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS7082N3 Rev D1 (W)

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