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PDF NTP8G206N Data sheet ( Hoja de datos )

Número de pieza NTP8G206N
Descripción Power GaN Cascode Transistor
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NTP8G206N
Power GaN Cascode
Transistor 600 V, 150 mW
Features
Fast Switching
Extremely Low Qrr
Transphorm Inside
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
Power Dissipation –
RqJC
Pulsed Drain
Current
Steady
State
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
tp = 10 ms
VDSS
VGS
ID
PD
IDM
600 V
±18 V
17 A
12
96 W
60 A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to °C
+150
Lead Temperature for Soldering Leads
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
Symbol
RqJC
RqJA
Value
1.55
62
Unit
°C/W
°C/W
www.onsemi.com
V(BR)DSS
600 V
RDS(ON) TYP
150 mW @ 10 V
N−Channel MOSFET
D (3)
G (1)
4
S (2,4)
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Source
1
2
3
TO−220
CASE 221A−09
STYLE 10
NTP8G206NG
AYWW
1
Gate
3
Drain
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
2
Source
ORDERING INFORMATION
Device
Package
Shipping
NTP8G206NG
TO−220
(Pb−Free)
50 Units / Rail
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 2
1
Publication Order Number:
NTP8G206N/D

1 page




NTP8G206N pdf
SiC Diode
NTP8G206N
VDS
90%
Figure 11. Switching Time Test Circuit
V 10%
GS
td(on)
tr
ton
tf
td(off)
toff
Figure 12. Switching Time Waveform
i, V
di F/dt
IF
IRRM
trr
tS tF
QS QF
10% I RRM
di rr /dt
90% I RRM
t
V RRM
trr = t S + tF
Qrr = Q S + Q
Figure 13. Test Circuit for Reverse Diode
Characteristics
Figure 14. Diode Recovery Waveform
www.onsemi.com
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