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Numéro de référence | NTMS4P01R2 | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | ON Semiconductor | ||
Logo | |||
1 Page
NTMS4P01R2
Power MOSFET
−4.5 Amps, −12 Volts
P−Channel Enhancement−Mode
Single SO−8 Package
Features
• High Density Power MOSFET with Ultra Low RDS(on)
Providing Higher Efficiency
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed with Soft Recovery
• IDSS Specified at Elevated Temperature
• Drain−to−Source Avalanche Energy Specified
• Mounting Information for the SO−8 Package is Provided
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
VDSS
−12 V
RDS(ON) TYP
30 mΩ @ −4.5 V
ID MAX
−4.5 A
Single P−Channel
D
G
S
8
1
SO−8
CASE 751
STYLE 13
MARKING DIAGRAM
& PIN ASSIGNMENT
N.C.
1
2
Source
3
Source 4
Gate
E4P01
LYWW
8 Drain
7 Drain
6 Drain
5 Drain
Top View
E4P01
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTMS4P01R2
SO−8
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
Publication Order Number:
NTMS4P01R2/D
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Pages | Pages 8 | ||
Télécharger | [ NTMS4P01R2 ] |
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