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IRF3707ZCLPbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF3707ZCLPbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF3707ZCLPbF fiche technique
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 95464A
IRF3707ZCSPbF
IRF3707ZCLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 9.5m
9.7nC
D2Pak
TO-262
IRF3707ZCSPbF IRF3707ZCLPbF
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gRθJA Junction-to-Ambient (PCB Mount)
Notes  through † are on page 11
www.irf.com
Max.
30
± 20
59h
42h
230
57
28
0.38
-55 to + 175
300 (1.6mm from case)
x x10 lbf in (1.1 N m)
Typ.
–––
–––
Max.
2.653
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
05/12/08

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