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IRFS4710PbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFS4710PbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFS4710PbF fiche technique
Applications
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
PD- 95146
IRFB4710PbF
IRFS4710PbF
IRFSL4710PbF
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
0.014
ID
75A
TO-220AB
IRFB4710
D2Pak
IRFS4710
TO-262
IRFSL4710
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
75
53
300
3.8
200
1.4
± 20
8.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
Notes  through ‡ are on page 11
www.irf.com
Typ.
–––
0.50
–––
–––
Max.
0.74
–––
62
40
Units
°C/W
1
04/22/04

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