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IRF6100 fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRF6100
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF6100 fiche technique
l Ultra Low RDS(on) per Footprint Area
l Low Thermal Resistance
l P-Channel MOSFET
l One-third Footprint of SOT-23
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
VDSS
-20V
PD - 93930F
IRF6100
HEXFET® Power MOSFET
RDS(on) max
0.065@VGS = -4.5V
0.095@VGS = -2.5V
ID
-5.1A
-4.1A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for, provides the designer with an ex-
tremely efficient and reliable device.
G
The FlipFETpackage, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFETthe best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipationƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
D
S FlipFET™ ISOMETRIC
Max.
-20
±5.1
±3.5
±35
2.2
1.4
17
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJA
RθJ-PCB
www.irf.com
Parameter
Junction-to-Ambientƒ
Junction-to-PCB mounted
Typ.
35
Max.
56.5
–––
Units
°C/W
1
07/13/06

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