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M75N06HD fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence M75N06HD
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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M75N06HD fiche technique
MTP75N06HD
Preferred Device
Power MOSFET
75 A, 60 V, N−Channel, TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low−voltage, high−speed switching applications in power supplies,
converters and PWM motor controls, and inductive loads. The
avalanche energy capability is specified to eliminate the guesswork in
designs where inductive loads are switched, and to offer additional
safety margin against unexpected voltage transients.
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Gate−Source Voltage − Continuous
Gate−Source Voltage − Single Pulse
VDSS
VDGR
VGS
60
60
± 20
± 30
Vdc
Vdc
Vdc
Vpk
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp 10 ms)
Total Power Dissipation
Derate above 25°C
ID 75 Adc
ID 50
IDM 225 Apk
PD 150 W
1.0 W/°C
Operating and Storage Temperature
Range
TJ, Tstg
−55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 75 Apk, L = 0.177 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
EAS
RqJC
RqJA
500 mJ
°C/W
1.0
62.5
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10
seconds
TL
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
http://onsemi.com
75 AMPERES
60 VOLTS
RDS(on) = 10 mW
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
TO−220AB
CASE 221A
STYLE 5
M75N06HD
LLYWW
1
2
3
M75N06HD
LL
Y
WW
1
Gate
3
Source
2
Drain
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP75N06HD TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3
1
Publication Order Number:
MTP75N06HD/D

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