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PDF NCE55P30 Data sheet ( Hoja de datos )

Número de pieza NCE55P30
Descripción P-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power 
Logotipo NCE Power Logotipo



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No Preview Available ! NCE55P30 Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCE55P30
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE55P30 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =-55V,ID =-30A
RDS(ON) <40m@ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE55P30
NCE55P30
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-55
±20
-30
-21
110
90
0.72
420
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

1 page




NCE55P30 pdf
http://www.ncepower.com
Pb Free Product
NCE55P30
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
Temperature ()
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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