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دیتاشیت - NCE Power Semiconductor - NCE N-Channel Super Trench Power MOSFET

شماره قطعه NCEP15T11J
شرح مفصل NCE N-Channel Super Trench Power MOSFET
تولید کننده NCE Power Semiconductor 
آرم NCE Power Semiconductor 


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NCEP15T11J شرح
http://www.ncepower.com
Pb Free Product
NCEP15T11J
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP15T11J uses Super Trench technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
RDS(ON) and Qg. This device is ideal for high-frequency
switching and synchronous rectification.
General Features
VDS =135V,ID =110A
RDS(ON) <7.0m@ VGS=10V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
Schematic diagram
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP15T11J
NCEP15T11J
TO-220-3L
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
135
±20
Drain Current-Continuous
ID 110
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
ID (100)
IDM
PD
EAS
TJ,TSTG
93
440
300
2
1296
-55 To 175
Quantity
-
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

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