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Número de pieza | FGH20N60SFDTU_F085 | |
Descripción | 20A Field Stop IGBT | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FGH20N60SFDTU_F085 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FGH20N60SFDTU_F085
600 V, 20 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20A
• High Input Impedance
• Fast Switching
• RoHS Compliant
• Qualified to Automotive Requirements of AEC-Q101
Applications
• Automotive chargers, Converters, High Voltage Auxiliaries
• Inverters, PFC, UPS
April 2015
•
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Automo-
tive Chargers, Inverter, and other applications where low con-
duction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2015 Fairchild Semiconductor Corporation
FGH20N60SFDTU_F085 Rev. 1.0
1
C
G
E
Ratings
600
20
30
40
20
60
165
66
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
W
W
oC
oC
oC
Typ.
0.76
2.51
40
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
1 page Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
©2015 Fairchild Semiconductor Corporation
FGH20N60SFDTU_F085 Rev. 1.0
5
www.fairchildsemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FGH20N60SFDTU_F085.PDF ] |
Número de pieza | Descripción | Fabricantes |
FGH20N60SFDTU_F085 | 20A Field Stop IGBT | Fairchild Semiconductor |
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