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Número de pieza | RDN080N25 | |
Descripción | Transistors | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RDN080N25 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Transistors
Switching (250V, 8A)
RDN080N25
RDN080N25
zFeatures
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
zApplication
Switching
zStructure
Silicon N-channel
MOS FET
zExternal dimensions (Units : mm)
TO-220FN
10.0
+0.3
−0.1
3.2±0.2
4.5
+0.3
−0.1
2.8
+0.2
−0.1
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54±0.5
2.54±0.5
0.75
+0.1
−0.05
(1) (2) (3)
2.6±0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
Continuous
Pulsed
ID
IDP ∗1
Reverse Drain
Current
Avalanche Current
Avalanche Energy
Continuous
Pulsed
IDR
IDRP
IAS
EAS
∗1
∗2
∗2
Total Power Dissipation (TC=25°C)
PD
Channel Temperature
Tch
Storage Temperature
Tstg
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
Limits
250
±30
8
32
8
32
8
136
35
150
−55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
zEquivalent Circuit
Drain
Gate
∗Gate
Protection
Diode
Source
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
1/3
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet RDN080N25.PDF ] |
Número de pieza | Descripción | Fabricantes |
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