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A2183 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba - Silicon PNP Epitaxial Type Transistor

شماره قطعه A2183
شرح مفصل Silicon PNP Epitaxial Type Transistor
تولید کننده Toshiba 
آرم Toshiba 


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A2183 شرح
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2183
High Current Switching Applications
Low collector-emitter saturation : VCE(sat) = 1.0 Vmax
2SA2183
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 60 V
Emitter-base voltage
VEBO 7 V
Collector current
DC
Pulse
IC
ICP
5.0
8.0
A
A
Base current
IB
0.5
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
PC
Tj
Tstg
2
20
150
55 to 150
W
W
°C
°C
1 : Base
2 : Collector
3 : Emitter
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-67
temperature/current/voltage and the significant change in
TOSHIBA
2-10U1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 1.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-16

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