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QM2411SN8 fiches techniques PDF

UBIQ - P-Ch 20V Fast Switching MOSFETs

Numéro de référence QM2411SN8
Description P-Ch 20V Fast Switching MOSFETs
Fabricant UBIQ 
Logo UBIQ 





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QM2411SN8 fiche technique
QM2411SN8
P-Ch 20V Fast Switching MOSFETs
General Description
The QM2411SN8 is the highest performance
trench P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
The QM2411SN8 meet the RoHS and Green
Product requirement with full function reliability
approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
-20V
RDSON
80m
ID
-3.2A
Applications
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
DFN 3X2 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Rating
-20
±8
-3.2
-2.6
-13
1.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Typ.
---
---
Max.
110
70
Unit
/W
/W
Rev A.02 D052611
1

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