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PDF IZ3367 Data sheet ( Hoja de datos )
| Número de pieza | IZ3367 | |
| Descripción | HIGH-VOLTAGE MOSFET KEY BUILT-IN LED DRIVER | |
| Fabricantes | Integral | |
| Logotipo |  |
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IL3367D, IZ3367
HIGH-VOLTAGE MOSFET КEY BUILT-IN LED – DRIVER
(functional analogue of HV9967 f. Suprtex inc.)
Microcircuits IL3367D, IZ3367 is a high-voltage
LED – driver with built-in MOSFET кey.
It is intended for application in a modern energy-saving
lighting systems and advertising-informational devices.
08
01
Index D
SO-package
Main characteristics:
IL3367D - plastic SO8-package
• Control of LED medium current with accuracy of Figure 1 – Integrated circuit designation
3%;
• LED current mean value is set by external resistor;
• input voltage on pin SW 8 V ≤ UIN ≤ 60 V;
• fixed duration of off-state, set by external resistor;
• option of LED light brightness adjustment by low-frequency PWM-signal;
• short circuit protection by output
• operating temperaturesrange from minus 40 to plus 85 °C;
• built-in MOSFET-transistor with operating voltage 60 V and the resistance of open channel
0,8 Оhm (standard value);
• option of cascade connection with a high-voltage MOSFET-transistor, operating in depletion
mode.
Application scope:
• DC/DC or AC/DC LED driver ;
• LED lighting for LCD-displays;
• Multi-purpose direct DC supply
• LED panels and boards;
• architectural and decorative LED light
• charging devices.
SW 01
RSENSE 02
GND 03
PWND 04
08 VDD
07 AGND
06 RT
05 TEST
Figure 2 – Designation of pins in package of IL3367D imicorcircuit
IL3367D, IZ3367_TC_E_v1 11.02.2013
1
1 page  
IL3367D, IZ3367
Таble 4 – Electrical parameters of integrated circuit
Symbol
Parameter
Measurement
conditions
Internally as adjustable sup- UIN = 8; 12; 60 V
UDDR ply voltage
ROSC = 100 кОhm
Threshold voltage at supply UDD rises
UVLORISE voltage ramp
Threshold voltage at supply UDD falls
UVLOFALL voltage fall
UEN(hi)
UEN(lo)
REN
UCS(TH)
High level input voltage on UDD = UDDR
PWMD pin
UIN = 12 V
UPWMD rises
Low level input voltage on UDD = UDDR
PWMD pin
UIN = 12 V
UPWMD falls
Attenuating resistance on UPWMD = 5 V
PWMD pin
Threshold voltage of
UIN = 12 V
loading current mean value UDD = UPWMD= 5 V
control block
Threshold voltage of
UIN = 12 V
UCS(SHORT)
absolute current mean value UDD = UDDR
control block
UPWMD = UDDR
Off-state consumption cur- UIN = 60 V
IINsd rent
UPWMD= 0 V
tBLANK
tON(MIN)
Blanking time of check UIN = 12 V
current lead front
UDD = UDDR
UPWMD= UDDR
Driver switch-on minimum UIN = 12 V
time
UDD = UDDR
URSENSE = 300 mV
Norm
min max
Ambient
tempera-
ture, °С
4,70 5,20 25 ± 10
Unit
V
4,10
3,5
-
0,80
50
243,0
236,5
355
4,70
-
2,00
-
150
257,0
262,0
440
-40
85
-40
85
-40
85
-40
85
25 ± 10
25 ± 10
-40
85
-40
85
V
V
V
V
кОhm
mV
mV
- 1,0 25 ± 10 mА
140 290
- 950
-40
85
-40
85
ns
ns
IL3367D, IZ3367_TC_E_v1 11.02.2013
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5 Page 
IL3367D, IZ3367
Chip thickness 0,35 ± 0,02 mm.
Technological marking on chip: 3367-2. Coordinates of technological marking, um: left bottom
corner х = 1,430, у = 1,715.
Chip carried out on substrate of electrically related with GND and AGND pins
Figure 7 –Contact pads layout diagram
IL3367D, IZ3367_TC_E_v1 11.02.2013
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IZ3367.PDF ] | |
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