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Numéro de référence | 2N3055 | ||
Description | Complementary Power Transistors | ||
Fabricant | Multicomp | ||
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1 Page
2N3055, MJ2955
Complementary Power Transistors
Designed for use in general-purpose amplifier and switching applications.
Features:
• Power dissipation - PD = 115W at TC = 25°C.
• DC current gain hFE = 20 to 70 at IC = 4.0A.
• VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.
Pin 1. Base
2. Emitter
Collector(Case)
Dimensions Minimum Maximum
A
38.75
39.96
B
19.28
22.23
C 7.96 9.28
D
11.18
12.19
E
25.20
26.67
F 0.92 1.09
G 1.38 1.62
H
29.90
30.40
I
16.64
17.30
J 3.88 4.36
K
10.67
11.18
Dimensions : Millimetres
NPN
2N3055
PNP
MJ2955
15 Ampere
Complementary Silicon
Power Transistors
60 Volts
115 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCER
VCBO
VEBO
IC
IB
PD
TJ, TSTG
Rating
60
70
100
7.0
15
7.0
115
0.657
-65 to +200
Unit
V
A
W
W/°C
°C
Page 1
31/05/05 V1.0
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Pages | Pages 5 | ||
Télécharger | [ 2N3055 ] |
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