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PDF QM6208V Data sheet ( Hoja de datos )

Número de pieza QM6208V
Descripción Dual N-Ch 60V Fast Switching MOSFETs
Fabricantes UBIQ 
Logotipo UBIQ Logotipo



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QM6208V
Dual N-Ch 60V Fast Switching MOSFETs
General Description
The QM6208V is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM6208V meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
60V
RDSON
100m
ID
2.5A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TSOP6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
Rating
10s Steady State
60
±20
2.8 2.5
2.2 2
15
1.5 1.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Typ.
---
---
---
Max.
110
85
70
Unit
/W
/W
/W
Rev A.01 D030711
1

1 page





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