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QM6008G fiches techniques PDF

UBIQ - N-Ch 60V Fast Switching MOSFETs

Numéro de référence QM6008G
Description N-Ch 60V Fast Switching MOSFETs
Fabricant UBIQ 
Logo UBIQ 





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QM6008G fiche technique
QM6008G
N-Ch 60V Fast Switching MOSFETs
General Description
The QM6008G is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM6008G meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Product Summery
BVDSS
60V
RDSON
100m
ID
2.8A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOT223 Pin Configuration
D
Absolute Maximum Ratings
G DS
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1,
Pulsed Drain Current2,
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
±20
2.8
2.3
12
1.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
85
48
Unit
/W
/W
Rev A.03 D062811
1

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