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Número de pieza | QM3301S | |
Descripción | N-Ch and P-Ch Fast Switching MOSFETs | |
Fabricantes | UBIQ | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de QM3301S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! QM3301S
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM3301S is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
The QM3301S meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Product Summery
BVDSS
30V
-30V
RDSON
20mΩ
45mΩ
ID
10A
6A
Applications
z Power management in half bridge and inverters
z DC-DC Converter
z Load Switch
SOP8 Pin Configuration
D1 D1D2D2
S1 G1 S2 G2
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
EAS
IAS
PD@TC=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-Channel P-Channel
30
±20
-30
±20
10 -6
6 -4
20 -12
72 59
21 -19
2.5 2.08
-55 to 150 -55 to 150
-55 to 150 -55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
85
50
Unit
℃/W
℃/W
Rev A.01 D092209
1
1 page QM3301S
N-Ch and P-Ch Fast Switching MOSFETs
1000
100
F=1.0MHz
Ciss
10
10us
100
Coss
1
100us
Crss
10
1 5 9 13 17 21 25
VDS Drain to Source Voltage (V)
Fig.7 Capacitance
0
TC=25℃
Single Pulse
0
0.1
1
VDS (V)
10
10ms
100ms
DC
100
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
0.001
0.0001
PDM
T ON
T
D = TON/T
TJpeak = TC+PDMXRθJC
0.001
0.01 0.1
1
t , Pulse Width (s)
10
Fig.9 Normalized Maximum Transient Thermal Impedance
100
1000
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet QM3301S.PDF ] |
Número de pieza | Descripción | Fabricantes |
QM3301S | N-Ch and P-Ch Fast Switching MOSFETs | UBIQ |
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