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PDF QM2604V Data sheet ( Hoja de datos )
| Número de pieza | QM2604V | |
| Descripción | N-Ch and P-Ch 20V Fast Switching MOSFETs | |
| Fabricantes | UBIQ | |
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QM2604V
N-Ch and P-Ch 20V Fast Switching MOSFETs
General Description
The QM2604V is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
The QM2604V meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
20V
-20V
RDSON
50mΩ
155 mΩ
ID
3.8A
-2.3A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TSOP6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TC=25℃
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
\
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
1
Rating
N-Channel P-Channel
20 20
±12
±12
3.8 -2.3
3 -1.8
15.2 -9.2
1.1 1.1
-55 to 150 -55 to 150
-55 to 150 -55 to 150
Units
V
V
A
A
A
W
℃
℃
Typ.
---
---
Max.
110
70
Unit
℃/W
℃/W
Rev A.02 D041411
1 page  
QM2604V
N-Ch and P-Ch 20V Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25℃ , ID=-1mA
VGS=-4.5V , ID=-3A
VGS=-2.5V , ID=-2A
VGS=VDS , ID =-250uA
VDS=-16V , VGS=0V , TJ=25℃
VDS=-16V , VGS=0V , TJ=55℃
VGS=±12V , VDS=0V
VDS=-5V , ID=-2A
VDS=0V , VGS=0V , f=1MHz
VDS=-15V , VGS=-4.5V , ID=-2A
VDD=-10V , VGS=-4.5V , RG=3.3Ω
ID=-2A
VDS=-15V , VGS=0V , f=1MHz
Min.
-20
---
---
---
-0.5
---
---
---
---
---
---
---
---
---
1.6
17.1
9
4.6
---
---
---
Typ.
---
-0.016
125
180
-0.8
3.97
---
---
---
5.6
25
4.7
0.8
1.3
3.2
34
18
9.2
320
51
41
Max.
---
---
155
220
-1.2
---
1
5
±100
---
50
6.6
1.1
1.8
6.4
61
36
18.4
448
71
57
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
IF=-2A , dI/dt=100A/µs , TJ=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
10.2
2.5
Max.
-2.3
-9.2
-1.2
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet QM2604V.PDF ] | |
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