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QM6006D fiches techniques PDF

UBIQ - N-Ch 60V Fast Switching MOSFETs

Numéro de référence QM6006D
Description N-Ch 60V Fast Switching MOSFETs
Fabricant UBIQ 
Logo UBIQ 





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QM6006D fiche technique
General Description
The QM6006D is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM6006D meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
QM6006D
N-Ch 60V Fast Switching MOSFETs
Product Summery
BVDSS
60V
RDSON
18m
ID
35A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z LCD/LED back light
TO252 Pin Configuration
D
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
GDS
Rating
60
±20
35
22
7.4
6
80
67
28
45
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
Typ.
---
---
Max.
62
2.8
Unit
/W
/W
Rev A.02 D082911

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