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QM3809M6 fiches techniques PDF

UBIQ - Dual N-Ch Fast Switching MOSFETs

Numéro de référence QM3809M6
Description Dual N-Ch Fast Switching MOSFETs
Fabricant UBIQ 
Logo UBIQ 





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QM3809M6 fiche technique
QM3809M6
General Description
The QM3809M6 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3809M6 meet the RoHS and Green
Product requirement 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Dual N-Ch Fast Switching MOSFETs
Product Summery
CH
Die1
Die2
BVDSS
30V
30V
RDSON
9m
5.5m
ID
57A
72A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter
PRPAK5X6 Pin Configuration
S2 S2 S2 G2
S1/D2
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
D1D1D1 G1
Rating
Die1
Die2
30 30
±20
±20
57 72
36 46
12 15
9.6 12
130 160
130 252
34 48
46 46
22
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Typ.
---
---
Max.
62
2.7
Unit
/W
/W
Rev A.01 D071111

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