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PDF 5N3011P Data sheet ( Hoja de datos )
| Número de pieza | 5N3011P | |
| Descripción | H5N3011P | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 5N3011P (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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H5N3011P
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
TO-3P
D
G
S
1
2
3
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
REJ03G0385-0200
Rev.2.00
Aug.05.2004
1. Gate
2. Drain (Flange)
3. Source
Ratings
300
±30
88
176
88
176
30
54
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00, Aug.05.2004, page 1 of 6
1 page  
H5N3011P
Reverse Drain Current vs.
Source to Drain Voltage
100
80
60
40
10 V
20 5 V
VGS = 0 V
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 0.833°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 150 V
Waveform
Vin 10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
Rev.2.00, Aug.05.2004, page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 5N3011P.PDF ] | |
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