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QM4306S fiches techniques PDF

UBIQ - N-Ch and P-Ch Fast Switching MOSFETs

Numéro de référence QM4306S
Description N-Ch and P-Ch Fast Switching MOSFETs
Fabricant UBIQ 
Logo UBIQ 





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QM4306S fiche technique
QM4306S
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM4306S is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
The QM4306S meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
40V
-40V
RDSON
10m
17m
ID
19A
-14.3A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter
SOP8 Pin Configuration
D1 D1 D2 D2
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S1 G1S2 G2
Rating
N-Ch
40
±20
P-Ch
-40
±20
19 -14.3
14.7 -11
38 -28.5
190 262
47 -54
5.2 5.2
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
Typ.
---
---
Max.
85
24
Unit
/W
/W
Rev A.01 D043010

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