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QM3016N3 fiches techniques PDF

UBIQ - N-Ch 30V Fast Switching MOSFETs

Numéro de référence QM3016N3
Description N-Ch 30V Fast Switching MOSFETs
Fabricant UBIQ 
Logo UBIQ 





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QM3016N3 fiche technique
QM3016N3
N-Ch 30V Fast Switching MOSFETs
General Description
The QM3016N3 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3016N3 meet the RoHS and Green
Product requirement 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Product Summery
BVDSS
30V
RDSON
4m
ID
80A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
DFN3X3 Pin Configuration
D
SS S G
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
80
50
17.2
13.8
160
317
53.8
43.4
1.67
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
Typ.
---
---
Max.
75
2.88
Unit
/W
/W
Rev A.02 D052511

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