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Datasheet K2115-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
K21 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K210 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below
NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0  Knox Semiconductor diode | | |
| 2 | K210 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510
• Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below
NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0  Knox Inc diode | | |
| 3 | K210 | N-Channel MOSFET, 2SK210 2SK210
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210
FM Tuner Applications VHF Band Amplifier Applications
• • • High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.) (f  Toshiba Semiconductor data | | |
| 4 | K2101 | N-Channel MOSFET, 2SK2101
2SK2101-01MR
FAP-IIA Series
N-channel MOS-FET
800V
2,1Ω
6A
50W
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC  Fuji Electric data | | |
| 5 | K2111 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor 2SK2111
MOSFICET
Features
Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed
SOT-89
4.50+0.1 -0.1
1.80+0.1 -0.1
12 3
0.48+0.1 -0.1
0.53+0.1 -0.1
+0.12.50 -0.1
+0.14.00 -0.1
Unit: mm 1.50+0.1
-0.1
0.44+0.1 -0.1
+0.10.80 -0.1
+0.12.6  Kexin transistor | | |
| 6 | K2111 | N-Channel MOSFET, 2SK2111 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2111
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.
This product has a low ON resistance and superb switching c  NEC data | | |
| 7 | K2114 | N-Channel MOSFET, 2SK2114 2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator
Outline
TO-220CFM
D 12 3 1. Gate
G 2. Drain 3. Source
S
2SK2114, 2SK2115
A  Hitachi Semiconductor data | |
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